BF620 transistor (npn) features power dissipation p cm: 500 mw (tamb=25 ) collector current i cm: 50 ma collector-base voltage v (br)cbo : 300 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 300 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 300 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 200 v, i e =0 10 na emitter cut-off current i ebo v eb = 5 v, i c =0 50 na dc current gain h fe(1) v ce = 20 v, i c = 25 ma 50 collector-emitter saturation voltage v ce(sat) i c = 30 ma, i b = 5 ma 0.6 v transition frequency f t v ce = 10 v, i c = 100 ma, f=100mhz 60 mhz marking dc sot-89 1. base 2. collector 3. emitter 1 2 3 b f620 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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